MOCVD is a thin-layer single crystal material that uses organic compounds of group III and group II elements and hydrides of group V and VI elements as crystal growth source materials, and performs vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V and II-VI compound semiconductors and their multicomponent solid solutions. Generally, the crystal growth in MOCVD system is carried out in the cold wall quartz (stainless steel) reaction chamber with H2 under normal pressure or low pressure (10-100torr). The substrate temperature is 500-1200 ℃, and the graphite base is heated by RF induction (the substrate is above the graphite base). H2 bubbles through a temperature controllable liquid source to carry organometallic substances to the growth area.
Our advantages
-It has a wide range of applications, and can grow almost all compounds and alloy semiconductors.
-It is very suitable for the growth of various heterostructure materials.
-Ultra thin epitaxial layers can be grown and a very steep interface transition can be obtained.
-Growth is easy to control.
-It can grow materials with high purity.
-Large area uniformity of epitaxial layer is good.
-Large scale production can be carried out.
Our products
It can completely eliminate the internal structural stress of the material, give full play to the best performance of the material, and make the material easier for subsequent machining.
Application | Tungsten products | Molybdenum products | Information |
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